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InAs/In0.15Ga0.85As1−xNx quantum dots for 1.5 μm laser applications

Published online by Cambridge University Press:  01 February 2011

Mirja Richter ,
Benjamin Damilano ,
Jean Massies ,
Jean-Yves Duboz  and
Andreas D. Wieck
Mirja Richter
Affiliation:
[email protected], Ruhr-Universität Bochum, Angewandte Festkörperphysik, Universitätsstraße 150, Bochum, NRW, 44780, Germany, +49 234 32 27636
Benjamin Damilano
Affiliation:
[email protected]
Jean Massies
Affiliation:
[email protected]
Jean-Yves Duboz
Affiliation:
[email protected]
Andreas D. Wieck
Affiliation:
[email protected]
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Abstract

Self-assembled InAs quantum dots (QDs) on GaAs substrate encapsulated with In0.15Ga0.85As1−xNx (GINA) have been grown by solid source molecular beam epitaxy, using optimal growth temperatures and rates for each of the two layers. The photoluminescence (PL) intensity increases for annealed samples. The optimum annealing temperature depends on the nitrogen composition. InAs QDs overgrown with larger nitrogen mole fraction GINA show a smaller PL peak blue-shift after annealing. Intense and narrow PL emission in the 1.5 µm range is achieved for samples annealed at optimal temperature.

Keywords

molecular beam epitaxy (MBE)Nannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-29
Copyright
Copyright © Materials Research Society 2006

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References

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