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InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy
Published online by Cambridge University Press: 15 February 2011
Abstract
In-situ, ultra high vacuum combined scanning tunneling microscope/atomic force microscope (STM/AFM) studies were undertaken to examine the initiation of 3D InAs islands on GaAs (100) and their density and size distribution as a function of growth conditions. A decreasing island density with increasing As4 pressure is observed and points to the significance of strain in affecting In migration and As4 incorporation. A stack of InAs islands separated by GaAs spacer layers exhibit a vertically self-organized growth. Through analysis of a phenomenological model, this is shown to be a consequence of a directional In adatom migration caused by the islandinduced nonuniform strain fields.
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- Copyright © Materials Research Society 1995
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