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In Stlo High Resolution Electron Microscopy for Interface Studies

Published online by Cambridge University Press:  26 February 2011

M. A. Parker  and
R. Sinclair
M. A. Parker
Affiliation:
Department of Materials Science and Enqineering, Stanford University, Stanford, CA 94305–2205
R. Sinclair
Affiliation:
Department of Materials Science and Enqineering, Stanford University, Stanford, CA 94305–2205
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Abstract

In situ kinetic measurements on the rate of solid—phase epitaxial regrowth of silicon in a conventional transmission electron microscope are described. The data compare well with those established for the sane material by high voltage electron microscopy and by Rutherford backscattering spectroscopy. High—resolution imaging at the same time provides direct information on atomic mechanisms. It is anticipated that this will beccme a more highly developed procedure in due course, especially for studies of interface reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 379
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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