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Improvement of Ultrathin Oxides by Post-Oxidation Annealing

Published online by Cambridge University Press:  03 September 2012

Tomoyuki Sakoda ,
Mieko Matsumura  and
Yasushiro Nishioka
Tomoyuki Sakoda
Affiliation:
Advanced Materials & Processes, Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Mieko Matsumura
Affiliation:
Advanced Materials & Processes, Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Yasushiro Nishioka
Affiliation:
Advanced Materials & Processes, Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

The low temperature oxidation is effective for the atomically-controlled gate oxide growth. We focused the effects of post-oxidation annealing (POA) and attempted to improve the properties of the low-temperature-grown ultrathin oxides with a thickness of 3nm by POA. POA abruptly reduced the leakage current at a low gate voltage below 1.5V and the interface trap density. The correlation between the interface trap and the leakage current at a low applied voltage region were confirmed. We found that the stressing immunity of the ultrathin oxides grown at a low temperature, 650°C, is drastically improved by POA at 850°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 315
Copyright
Copyright © Materials Research Society 1997

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