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Improvement of Thermal Stability of Metal/Oxide Interface for Electronic Devices

Published online by Cambridge University Press:  10 February 2011

Yo Ichikawa ,
Masayoshi Hiramoto ,
Nozomu Matsukawa ,
Kenji Iijima  and
Masatoshi Kitagawa
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Masayoshi Hiramoto
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Nozomu Matsukawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Kenji Iijima
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
Masatoshi Kitagawa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Seikacho, Kyoto 619–02, Japan
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Abstract

The nano-meter controlled iron/iron-oxide multilayer materials have been successfully obtained by the pulse reactive sputtering method with high deposition rate. These multilayer demonstrated a good thermal stability of its structure and magnetic properties up to 500°C when a small amount of Si was doped in the structure, whereas the non-doped multilayer degraded at above 300°C. The difference of the oxidation energy between Fe and Si increases the thermal stability of the interface between Fe and Fe-O layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Kobayashi, T., J. Appl. Phys., 73, 858 (1993)Google Scholar
2. Senda, M. and Nagai, Y., J. Appl. Phys., 65, 1238 (1989)Google Scholar
3. Sakakima, H., Osano, K., Ihra, K. and Satomi, M., J. Magn. Magn. Mat, 93, 349 (1991)Google Scholar
4. Fujimori, H., Hasegawa, N., Kawaoka, N., Nagata, S. and Yamaguchi, S., J. Magn. Magn. Mat, 121, 42 (1993)Google Scholar
5. Ruf, R. R. and Gambino, R. J., J. Appl‥ Phys., 55, 2628 (1984)Google Scholar