Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:56:30.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Grain-Growth and Surface Roughness in Laser-Crystallized Polycrystalline Silicon Films

Published online by Cambridge University Press:  10 February 2011

H.-S. Choi ,
C.-M. Park ,
J.-H. Jeon ,
B.-H. Min  and
M.-K. Han
H.-S. Choi
Affiliation:
School of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
C.-M. Park
Affiliation:
School of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
J.-H. Jeon
Affiliation:
School of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
B.-H. Min
Affiliation:
School of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
M.-K. Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
Get access

Abstract

The effects of nitrogen-radical treated amorphous silicon (a-Si) films on laser-crystallization behavior have been studied for the improvement of the grain-growth and the surface roughness. The radical treatments were performed by the rf (13.56 MHz) plasma-enhanced-chemical-vapor-deposition (PECVD) system with N2 gas before the laser-crystallization. The grain-size of the laser-crystallized polycrystalline silicon (poly-Si) film with 600 seconds of radical-treatment time was remarkably increased by the relaxation of solidification process caused by the possible evolution of solid phase SiNx compounds which shows the low thermal conductivity. The electrical conductivity at 30 °C was rather lager value of 3×10-5 Ω-1cm-1 than 1×10-5 Ω-1cm-1 of poly-Si without radical treatment, while the highly resistive SiNx compounds were formed. From the SEM images, the surface roughness was also improved by the selective etching of the 5%-water-diluted hydrofluoric (HF) acid on the grain boundaries which the SiNx compounds were well segregated into during the laser-crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 421
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Seki, S., Kogure, O. and Tsujiyama, B., IEEE Elecron Device Letter EDL–8, 425 (1990).Google Scholar
2. Hawkins, W. G., IEEE Trans. Electron Devices ED–33, 477 (1986).Google Scholar
3. Thompson, M. O., Mayer, J. W., Cullis, A. G., Webber, H. C and Chew, N. G., Phys. Rev. Lett. 50, 896 (1983).Google Scholar
4. Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
5. Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys. 30, 3700 (1991).Google Scholar
6. Shimizu, K., Sugiura, O. and Matsumura, M., Int. Electron Devices Tech. Dig., 669 (1992).Google Scholar
7. Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Tsuda, S. and Nakano, S., Int. Electron Devices Tech. Dig., 563 (1991).Google Scholar
8. Takahashi, H. and Kojima, Y., Appl. Phys. Lett. 64, 2273 (1994).Google Scholar
9. Takechi, K., Uchida, H. and Kaneko, S., Mat. Res. Soc. Symp. Proc. 258, 955 (1992).Google Scholar
10. Sameshima, T., Hara, M., Sano, N. and Usui, S., Jpn. J. Appl. Phys. 29, L1363 (1990).Google Scholar
11. Kim, H. J., Im, J. S. and Thompson, M. O., Mat. Res. Soc. Symp. Proc. 283, 703 (1993).Google Scholar
12. Hamasaki, M., Adachi, T., Wakayama, S. and Kikuchi, M., J. Appl. Phys. 49, 3987 (1978).Google Scholar