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Improvement in Performance of A-SiGe:H Solar Cells for Multi-Junction Cells

Published online by Cambridge University Press:  01 January 1993

E. Maruyama ,
Y. Yoshimine ,
A. Terakawa ,
K. Sayama ,
K. Ninomiya ,
Y. Hishikawa ,
H. Tarui ,
S. Tsuda ,
S. Nakano  and
Y. Kuwano
E. Maruyama
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
Y. Yoshimine
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
A. Terakawa
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
K. Sayama
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
K. Ninomiya
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
Y. Hishikawa
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
H. Tarui
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
S. Tsuda
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
S. Nakano
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
Y. Kuwano
Affiliation:
Functional Materials Research Center,Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka Japan
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Abstract

The quality of a-SiGe:H film was improved by considering the effects of substrate temperature and deposition rate on film properties. Accurate measurement of the optical gap and the film composition of Si, Ge and H made it possible to formulate the optical gap using a linear function of bonded H content (CH) and Ge content (CGE). It was found for the first time that, when the optical gap is fixed to a certain value, the optimum compositions of CHAand CGe exist for high-quality a-SiGe:H. Based on these, we obtained the world's highest conversion efficiency of 3.7 % under red light (AM-1.5, 100mW/cm2 through an R65 filter which allows passage of longer wavelength (>650nm) light) for a 1cm2 a-SiGe single-junction cell. Long-term stability of the cell was also improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 821
Copyright
Copyright © Materials Research Society 1993

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References

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