Article contents
Improved Hole Diffusion Lengths in Bulk n-Type GaAs for High Efficiency Solar Cells
Published online by Cambridge University Press: 25 February 2011
Abstract
A method for wafer annealing which is effective in suppressing defects and raising minority carrier diffusion lengths in n-type bulk GaAs is described. The beneficial effect of the annealing is shown to be associated with the proximity surface with measurements of photoresponse as a function of depth. The concentration of the hole trap HCX (Ev+0.29eV) varies as a function of depth from the surface, qualitatively, as might be expected of the concentration of the dominant recombination center in the material. The impact of improving the material in this manner on the performance of Zn diffused solar cells is demonstrated.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
- 1
- Cited by