In recent years, the semiconductor industry has increasingly relied on strain as a performance enhancer for both n and p-MOSFETs. For p-MOSFETs, selectively grown SiGe alloys in recessed source/ drain regions are used to induce uniaxial compressive strain in the channel. In order to induce compressive strain effectively using this technology, a number of parameters including recess depth, SiGe thickness (junction thickness), sidewall thickness, dopant density, dislocation density, and contact materials have to be optimized. In this work, we have studied the effects of heavy boron doping and self-aligned germanosilicide formation on local strain. Raman spectroscopy has been used to study the impact of heavy boron doping on compressive stress in SiGe films. Strain energy calculations have been performed based on Vegard's law for ternary alloys and the effect of boron on strain in SiGeB alloys modeled quantitatively. It will be shown that, owing to the smaller size of a boron atom, one substitutional boron atom compensates the strain due to 6.9 germanium atoms in the SiGeB film grown pseudomorphically on silicon. The critical thickness of SiGeB has been calculated for the first time based on kinetically limited critical thickness calculations for metastable SiGe films. It will be shown that the critical thickness of the alloy increases as the boron content in the alloy is increased, making boron concentration an additional parameter for optimizing strain in the MOSFET. Based on these conclusions, boron concentration can be used to preserve the strain for thicker SiGeB films (compared to SiGe films) while keeping the dislocation density low. Furthermore, we show that NiSiGe contacts can have a profound impact on the SiGe strain. Our results indicate that NiSiGe introduces additional stress in the underlying SiGe, which further affects the strain induced in the channel