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III-Nitride Photonic Crystals for Blue and UV Emitters

Published online by Cambridge University Press:  01 February 2011

J. Shakya ,
K. H. Kim ,
J. Li ,
J. Y. Lin ,
H. X. Jiang  and
T. N. Oder
J. Shakya
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
K. H. Kim
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
J. Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
T. N. Oder
Affiliation:
Department of Physics and Astronomy, Youngstown State University, Youngstown, Ohio 44555, USA
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Abstract

We report the nanofabrication and characterization of triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on III-nitride Light Emitting Diodes (LEDs) using electron beam lithography and inductively-coupled-plasma dry etching. Under optical pumping, a maximum enhancement factor of 20 was obtained from the PCs for emission light intensity at the wavelength of 475 nm at room temperature. Under current injection, the total power at 20 mA of 300 × 300 μm2 unpackaged LED chips revealed an increase by 63% and 95% for 460 nm blue and 340 nm UV LEDs, respectively, as a result of the PC formation. Our results show that the fabrication of PCs enhances the power output significantly on the III-nitride LEDs, which currently have very low external quantum efficiency especially in the UV range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.6
Copyright
Copyright © Materials Research Society 2004

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References

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