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Hot Wall Epitaxial Growth of Diluted Magnetic Semiconductor Zn1-xMnxSe(111) GaAs(100) Substrate

Published online by Cambridge University Press:  21 February 2011

J. Wang ,
C.S. Zhu ,
Aziz-Ul-Haq Qureshi  and
Xun Wang
J. Wang
Affiliation:
Surface Physics Laboratory and Fudan T.D. Lee Physics Laboratory, Fudan University, hanghai, China
C.S. Zhu
Affiliation:
Surface Physics Laboratory and Fudan T.D. Lee Physics Laboratory, Fudan University, hanghai, China
Aziz-Ul-Haq Qureshi
Affiliation:
Surface Physics Laboratory and Fudan T.D. Lee Physics Laboratory, Fudan University, hanghai, China
Xun Wang
Affiliation:
Surface Physics Laboratory and Fudan T.D. Lee Physics Laboratory, Fudan University, hanghai, China
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Abstract

We report the growth of Zn1-xMnxSe films on GaAs(100) by hot wall epitaxy (HWE) up to a Mn concentration of 52%. The crystal structures of Zn1-xMnxSe layers were characterized by x-ray diffraction and Raman scattering. For the first time Zn1-xMnxSe(111) layers on GaAs(100) substrate have been grown and mixed phases of zinc-blende and hexagonal structure have been observed over the range 0.19≤x≤0.52.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 341
Copyright
Copyright © Materials Research Society 1994

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