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Hot Electron Transistors Using Si/CoSi2

Published online by Cambridge University Press:  28 February 2011

A. F. J. Levi ,
R. T. Tung ,
J. L. Batstone  and
M. Anzlowar
A. F. J. Levi
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Anzlowar
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 259
Copyright
Copyright © Materials Research Society 1988

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References

1 Sugii, T., Yamazaki, T., Fukano, T., and Ito, T., IEEE Electron Device Lett. EDL–8, 528 (1987).CrossRefGoogle Scholar
2 Newcombe, G. and Lonzarich, G. G. (private communication) and G. Newcombe, PhD Thesis, University of Cambridge (1987).Google Scholar
3 Levi, A. F. J. and Chiu, T. H., Appl. Phys. Lett. 51, 984 (1987).Google Scholar
4 Stiles, M. D. and Hamann, D. R. (private communication).Google Scholar
5 Levi, A. F. J., Hayes, J. R. and Bhat, R., Appl. Phys. Lett. 48, 1609 (1986).Google Scholar
6 Levi, A. F. J. and Yafet, Y., Appl. Phys. Lett. 51, 42 (1987).Google Scholar
7 Rosencher, E., Badoz, P. A., Pfister, J. C., Arnaud d'Avitaya, F., Vincent, G. and Delage, S., Appl. Phys. Lett. 49, 271 (1986).Google Scholar
8 Tung, R. T., Levi, A. F. J., and Gibson, J. M., Appl. Phys. Lett. 48, 635 (1986).Google Scholar
9 Hunt, B. D., Lewis, N., Schowalter, L. J., Hall, E. L., and Turner, L. G., Mat. Res. Soc. Symp. Proc. 77, 351 (1987).Google Scholar
10 von Kanel, H., Henz, J., Ospelt, M. and Wachter, P., presented at 7th European Physical Society, Pisa, 1987.Google Scholar
11 van der Veen, J. F., private communication.Google Scholar
12 Tung, R. T. and Batstone, J. L., this volume.Google Scholar
13 Rosencher, E., Delage, S., Campidelli, Y., and Arnaud d'Avitaya, F., Electron. Lett. 19, 762 (1984).Google Scholar
14 Hunt, B. D. (private communication).Google Scholar
15 Mattheiss, L. F. and Hamann, D. R. (private communication).Google Scholar