Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-09T20:44:43.090Z Has data issue: false hasContentIssue false
  • English
  • Français

Hot Electron Transistors Using Si/CoSi2

Published online by Cambridge University Press:  26 February 2011

A. F. J. Levi ,
R. T. Tung ,
J. L. Batstone  and
M. Anzlowar
A. F. J. Levi
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Anzlowar
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

We have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 361
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Sugii, T., Yamazaki, T., Fukano, T., and Ito, T., IEEE Electron Device Lett. EDL–8, 528 (1987).Google Scholar
2.Newcombe, G. and Lonzarich, G. G. (private communication) and Newcombe, G., PhD Thesis, University of Cambridge (1987).Google Scholar
3.Levi, A. F. J. and Chiu, T. H., Appl. Phys. Lett. 51, 984 (1987).Google Scholar
4.Stiles, M. D. and Hamann, D. R. (private communication).Google Scholar
5.Levi, A. F. J., Hayes, J. R. and Bhat, R., Appl. Phys. Lett. 48, 1609 (1986).Google Scholar
6.Levi, A. F. J. and Yafet, Y., Appl. Phys. Lett. 51, 42 (1987).Google Scholar
7.Rosencher, E., Badoz, P. A., Pfister, J. C., d'Avitaya, F. Arnaud, Vincent, G. and Delage, S., Appl. Phys. Lett. 49, 271 (1986).Google Scholar
8.Tung, R. T., Levi, A. F. J., and Gibson, J. M., Appl. Phys. Lett. 48, 635 (1986).Google Scholar
9.Hunt, B. D., Lewis, N., Schowalter, L. J., Hall, E. L., and Turner, L. G., Mat. Res. Soc. Symp. Proc. 77, 351 (1987).Google Scholar
10.Kinel, H. von, Henz, J., Ospelt, M. and Wachter, P., presented at 7th European Physical Society, Pisa, 1987.Google Scholar
11.Veen, J. F. van der, private communication.Google Scholar
12.Tung, R. T. and Batstone, J. L., this volume.Google Scholar
13.Rosencher, E., Delage, S., Campidelli, Y., and d'Avitaya, F. Arnaud, Electron. Lett. 19, 762 (1984).Google Scholar
14.Hunt, B. D. (private communication).Google Scholar
15.Mattheiss, L. F. and Hamann, D. R. (private communication).Google Scholar