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High-Resolution X-Ray Characterization of Amorphous Semiconductor Multilayers
Published online by Cambridge University Press: 25 February 2011
Abstract
We discuss high-resolution x-ray diffraction measurements on a-Si:H/a-Ge:H periodic amorphous multilayers. Analysis of the data using the dynamical theory yields information on layer thicknesses and densities, interface and surface roughness, and structural defects such as layer thickness fluctuations.
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- Copyright © Materials Research Society 1989
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