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Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

Published online by Cambridge University Press:  29 January 2014

Juan Paolo Bermundo ,
Yasuaki Ishikawa ,
Haruka Yamazaki ,
Toshiaki Nonaka  and
Yukiharu Uraoka
Juan Paolo Bermundo
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Yasuaki Ishikawa
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Haruka Yamazaki
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Toshiaki Nonaka
Affiliation:
AZ Electronic Materials Manufacturing Japan K.K. 3330 Chihama, Kakegawa-shi, Shizuoka, 437-1412, Japan
Yukiharu Uraoka
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Abstract

Polysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

Keywords

passivationoxidephotoconductivity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 139 - 144
Copyright
Copyright © Materials Research Society 2014 

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References

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