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High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
Excimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.
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- Copyright © Materials Research Society 1993
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