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High Resolution Electron Microscopy of Interfaces in Topotaxial and Epitaxial Reactions

Published online by Cambridge University Press:  21 February 2011

U. Dahmen ,
J. Douin ,
C.J.D. Hetherington  and
K.H. Westmacott
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
J. Douin
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
C.J.D. Hetherington
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
K.H. Westmacott
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
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Abstract

In the study of interfaces HREM is most useful when the interface is viewed edge-on while both crystals are accurately aligned along low index zone axes. The formation of such interfaces by epitaxy or topotaxy is the natural means of obtaining structures that can be usefully analyzed by HREM. Furthermore, there is intense interest in understanding the atomic structure of such interfaces in a variety of technologically important materials. This contribution addresses such structures produced by thermal decomposition, precipitation reactions and ionized-clusterbeam deposition, and reports on the structural investigation of symmetrical and asymmetrical grain boundaries, precipitate/matrix interfaces, internal defect structure of precipitates and nanocrystalline composites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 87
Copyright
Copyright © Materials Research Society 1989

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References

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