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High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

Published online by Cambridge University Press:  01 February 2011

Guozhen Yue ,
Baojie Yan ,
Jeffrey Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
[email protected], United Solar Ovonic LLC, Research and Development, 1100 West Maple Road, Troy, MI, 48084, United States, (248)519-5317, (248)362-4442
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
Jeffrey Yang
Affiliation:
[email protected], United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
Subhendu Guha
Affiliation:
[email protected], United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
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Abstract

We report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

Keywords

amorphousplasma depositionSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A15-04
Copyright
Copyright © Materials Research Society 2007

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References

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