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High quality GaN layers grown on slightly miscut sapphire wafers

Published online by Cambridge University Press:  01 February 2011

Peter Brüeckner ,
Martin Feneberg ,
Klaus Thonke ,
Frank Habel  and
Ferdinand Scholz
Peter Brüeckner
Affiliation:
[email protected], University of Ulm, Optoelectronics Department, Albert-Einstein-Alee 45, 89081 Ulm, Ulm, N/A, 89081, Germany
Martin Feneberg
Affiliation:
[email protected], Germany
Klaus Thonke
Affiliation:
[email protected], Germany
Frank Habel
Affiliation:
[email protected], Germany
Ferdinand Scholz
Affiliation:
[email protected], Germany
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Abstract

HVPE grown layers typically show a high density of pyramidal structures on the surface. We found that a slight off-orientation of the substrate totally suppresses the development of these structures. Further we found that a misorientation toward the m-plane of GaN features a smoother surface morphology, compared to an off-orientation towards the a-plane. After the improvement of the surface morphology and other properties of the HVPE grown layers, we studied self-separation processes. Our approaches to remove the thick GaN-layer from the substrate were a low-temperature interlayer and a structured dielectric mask.

Keywords

vapor phase epitaxy (VPE)stress/strain relationshipcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF21-04
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Park, S. S., Park, I.-W. and Cho, S. H., Jpn. J. Appl. Phys. 39, L1141 (2000).CrossRefGoogle Scholar
2. Xu, X., Vaudo, R.P., Loria, C., Salant, A., Brandes, G.R. and Chaudhuri, J., J. Crystal Growth 246, 223 (2002).CrossRefGoogle Scholar
3. Kuramoto, M., Sasaoka, C., Hisanaga, Y., Kimura, A., Yamaguchi, A. A., Sunakawa, H., Kuroda, N., Nido, M., Usui, A. and Mizuta, M., Jpn. J. Appl. Phys. 38, L184 (1999).CrossRefGoogle Scholar
4. Cao, X. A., LeBoeuf, S. F., D'Evelyn, M. P., Arthur, S. D., Kretchmer, J., Yan, C. H. and Yang, Z. H., Appl. Phys. Lett. 84, 4313 (2004).CrossRefGoogle Scholar
5. Lu, D., Florescu, D. I., Lee, D. S., Merai, V., Ramer, J. C., Parekh, A. and Armour, E. A., J. Cryst. Growth 272, 353 (2004).CrossRefGoogle Scholar
6. Yuasa, T., Ueta, Y., Tsuda, Y., Ogawa, A., Taneya, M., Takao, K., Jpn. J. Appl. Phys. 38, L703 (1999).CrossRefGoogle Scholar
7. Brückner, P., Habel, F. and Scholz, F., ICNS6, Bremen 2005, poster contribution, submitted to phys. stat. sol. Google Scholar
8. Scholz, F., Brückner, P., Habel, F., Peter, M. and Köhler, K., Appl. Phys. Lett. 87, 181902 (2005).CrossRefGoogle Scholar
9. Miskys, C.R., Kelly, M.K., Ambacher, O. and Stutzmann, M., phys. stat. sol. c 1, 1627 (2003).Google Scholar
10. Matoki, K., Okahisa, T., Matsumoto, N., Matsushima, M., Rimura, H., Kasai, H., Takemoto, K., Uematsu, K., Hirano, T., Nakayama, M., Nakahata, M., Ueno, M., Hara, D., Kumagai, Y., Koukitu, A. and Seki, H., Jpn. J. Appl. Phys. 40, L140 (2001).CrossRefGoogle Scholar
11. Oshima, Y., Eri, T., Shibata, M., Sunakawa, H., Kobayashi, K., Ichihashi, T. and Usui, A., Jpn. J. Appl. Phys. 42, L1 (2003).CrossRefGoogle Scholar
12. Tomita, K., Kachi, T., Nagai, S., Kojima, A., Yamasaki, S. and Koike, M., phys. stat. sol. a 194, 563 (2002).3.0.CO;2-B>CrossRefGoogle Scholar
13. Zhillyaev, Yu. V., Nasanow, A. V., Raevxki, S. D., Rodin, S. N., Shcheglov, M. P. and Davydov, V. Yu., phys. stat. sol. a 195, 122 (2003).CrossRefGoogle Scholar
14. Habel, F., Brückner, P., Tsay, J.-D., Liu, W.-Y., Scholz, F., Schmitz, D., Alam, A. and Heuken, M., phys. stat. sol. c 2, 2049 (2005).Google Scholar
15. Kuhn, B., Scholz, F.; phys. stat. sol. a 188, 629 (2001).3.0.CO;2-#>CrossRefGoogle Scholar
16. Scholz, F., Brückner, P., Habel, F., Peter, M. and Köhler, K., Appl. Phys. Lett. 87, 181902 (2005).CrossRefGoogle Scholar
17. Tachibana, K., Nago, H. and Nunoue, S., ICNS6, Bremen 2004, oral presentation.Google Scholar
18. Habel, F., Brückner, P., Scholz, F., J. Crystal Growth 272, 515 (2004).CrossRefGoogle Scholar
19. Habel, F. and Seyboth, M., phys. stat. sol. c 0, 2448 (2003).Google Scholar