Article contents
Growth Temperature and Oxygen Ambient Dependency of SrTiO3/Si(100) InterfaceStructures
Published online by Cambridge University Press: 17 March 2011
Abstract
A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2002
References
- 1
- Cited by