Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T17:32:47.785Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of MnS, Cd1-xMnxSe, and MnS1-xSex Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

Published online by Cambridge University Press:  21 February 2011

A.I. Gurary ,
R.A. Stall ,
G.S. Tompa ,
Y. Lu ,
W.E. Mayo  and
C.Y. Hwang
A.I. Gurary
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
R.A. Stall
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
G.S. Tompa
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873.
Y. Lu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ 08855-0909.
W.E. Mayo
Affiliation:
Rutgers University, Department of Mechanics and Material Science, Piscataway, NJ 08855-0909.
C.Y. Hwang
Affiliation:
Rutgers University, Department of Mechanics and Material Science, Piscataway, NJ 08855-0909.
Get access

Abstract

This work addressed the MBE and EVTE growth of wide band gap semiconductor materials such as MnSe, Cd1-xMnxSe, and MnS1-xSex which have potential application for blue-green light emitters. It is the first time that EVTE was applied for high (Se, S, Cd) and low (Mn) vapor pressure materials, which required modification of the conventional design. The films were grown on GaAs 2° off (100) substrates and characterized using optical microscopy, SEM, EDS, X-ray, SIMS, Hall, and sheet resistance measurements. The deposition process parameters will be reviewed and related to results such as film composition, surface morphology, uniformity, and crystallinity. We report on growth of Cd1-xMnxSe with 0.42<X<0.99 and MnS1_xSex with 0.58<X<0.67. Different methods of controling elemental composition will be discussed. Grown materials show good surface morphlogy and uniformity. SIMS analysis demonstrated stable elemental composition throughout the film thickness and a sharp interface with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 305
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kolodziejski, L.A., Gunshor, R.L., N.Otsuka, , Gu, B.P., Hafetz, Y., and Nurmikko, A.V.. Appl. Phys. Lett. 48 (21), pp.1482–1484, 26 May 1986.Google Scholar
2 Tompa, G.S., Gurary, A.I., Liang, S., Stall, R.A.. J. Vac. Sci. Technol. B, 10 (2), 975–977 (1992).Google Scholar
3 Gurary, A.I., Tompa, G.S., Liang, S., Stall, R.A., Y.Lu, , Hwang, C-Y., and Mayo, W.E.. Journal of Electronic Materials, Vol. 22, No. 5, 1993.Google Scholar
4 Honig, R.E. and Kramer, D.A., RCA Review, 30, 285 (1969).Google Scholar
5 Gurary, A.I., Tompa, G.S., Liang, S., Stall, R.A., Y.Lu, , Hwang, C-Y., and Mayo, W.E.. Mater. Res. Soc. Proc.281, Pittsburgh, PA,1992) pp. 233–237.Google Scholar
6 Magee, C.W., Harrington, W.L., and Botnick, E.M.. International Journal of Mass and Ion Processes, 103 (1990) 45–56.Google Scholar