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Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Rong Z. Qian ,
D. Kinosky ,
A. Mahajan ,
S. Thomas ,
J. Fretwell ,
P. Munguia ,
S. Banerjee  and
A. Tasch
Rong Z. Qian
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
D. Kinosky
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
A. Mahajan
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
S. Thomas
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
J. Fretwell
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
P. Munguia
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
A. Tasch
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
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Abstract

Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been successfully used to grow GexSi1−x/Si (x = 0.1 – 1.0) heteroepitaxial structures at low temperatures (∼450°C). This technique utilizes a noble gas (Ar or He) r-f plasma to decompose reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions in the gas phase as well as on the substrate surface. Growth of pure Ge on Si is of great interest because it provides a promising technique for making suitable low-cost substrates for thin-film Ge photodetectors as well as GaAs devices on Si substrates. The realization of these applications depends on the ability to grow high-quality epitaxial Ge layers on Si substrates. Since GaAs is lattice matched to Ge, growth of Ge layers on Si substrates with good crystalline perfection would permit the integration of GaAs and Si devices. Islanding was observed after the growth of pure Ge films directly on Si(100) for a wide range of plasma powers (7W ∼ 16W) in RPCVD. Cross-sectional TEM analysis showed that the islands have complicated facet structures, including {311} planes. Graded Gex Si1−x buffer layers with different Ge profiles have been used prior to the growth of Ge. It was found that uniform Ge films can be obtained using a buffer with an abrupt Ge profile, and the dislocation density in the Ge film decreases with increasing distance from the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 421
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Lang, D. V., People, R., Bean, J. C., and Sergent, A. M., Appl. Phys. Lett. 47(12), 1333 (1985).Google Scholar
[2] People, R., J. Quantum Electronics, QE–22 (9), 1696 (1986).Google Scholar
[3] Lucovsky, G., Kim, S., and Fitch, J., J. Vac. Sci. Technol. B8(4), 822 (1990).Google Scholar
[4] Piper, L., and Caledonia, G., J. Phys. Chem., 95, 698–701 (1991).Google Scholar
[5] Rudder, R., Fountain, G., and Markunas, R., J. Appl. Phys. 60(10), 3519 (1986).Google Scholar
[6] Banerjee, S., Tasch, A., Anthony, B., Hsu, T., Breaux, L., and Qian, R., Proceedings of the First International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1–7, 1990, ed. Lendvay, E., Trans Tech Publications, Switzerland.Google Scholar
[7] Hsu, T., Anthony, B., Qian, R., Irby, J., Kinosky, D., Mahajan, A., Banerjee, S., Magee, C., Tasch, A., J. Electronic Materials, 21 (1), 65 (1992).Google Scholar
[8] Anthony, B., Hsu, T., Breaux, L., Qian, R., Banerjee, S., and Tasch, A., J. Electronic Materials, 19 (10), 1089 (1990).Google Scholar
[9] Anthony, B., Hsu, T., Qian, R., Irby, J., Banerjee, S., and Tasch, A., J. Electronic Materials, 20 (4), 309 (1991).Google Scholar
[10] Kinosky, D., Qian, R., Irby, J., Hsu, T., Anthony, B., Banerjee, S., Tasch, A., Magee, C., and Grove, C., Appl. Phys. Lett. 59(7), 817 (1991).Google Scholar
[11] Qian, R., Anthony, B., Hsu, T., Irby, J., Kinosky, D., Banerjee, S., Tasch, A., and Magee, C., Journal of Electronic Materials, 21 (4), 395 (1992).Google Scholar
[12] Qian, R., Kinosky, D., Mahajan, A., Thomas, S., Banerjee, S., Tasch, A., Magee, C., and Grove, C., presented at the 34th Annual Conference of the Electronic Materials Conference, June 24–26, 1992, Cambridge MA, to be published in J. of Electronic Materials.Google Scholar
[13] Koide, Y., Zaima, S., and Ohshima, N., Jpn. J. Appl. Phys., 28(4), L690–L693, (1989).Google Scholar
[14] Mo, Y.-W., Savage, D. E., Swartzentruber, B. S., and Lagally, M. G., Phys. Rev. Lett., 65(8), 1020, (1990).Google Scholar
[15] Asai, M., Ueba, H., and Tatsuyama, C., J. Appl. Phys., 58(7), 2577, (1985).Google Scholar
[16] Eaglesham, D., and Cerullo, M., Phys. Rev. Lett., 64(16), 1943, (1990).Google Scholar
[17] Copel, M., Reuter, M. C., Kaxiras, Efthimios, and Tromp, R. M., Phys. Rev. Lett. 63 (6), 632 (1989).Google Scholar
[18] Choi, C., Hultman, L., and Barnett, S., J. Vac. Sci. Technol. A8 (3), 1587 (1990).Google Scholar
[19] Tsai, C. J., PhD. thesis (Caltech, 1992), chapter 5, p. 89.Google Scholar
[20] Luryi, S., Kastalsky, Alexander, and Bean, John C., IEEE Transactions on Electron Devices, ED–31 (9), 1135 (1984).Google Scholar
[21] Baribeau, J. M., Jackman, T. E., Maigne, P., Houghton, D. C., and Denhoff, M. W., J. Vac. Sci. Technol. A5 (4), 1898 (1987).Google Scholar
[22] Krishnamoorthy, V., Lin, Y. W., and Park, R. M., J. Appl. Phys. 72 (5), 1752 (1992).Google Scholar