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Growth of Epitaxial IrSi3 Layers on Si(111)

Published online by Cambridge University Press:  28 February 2011

T. L. Lin  and
C. W. Nieh
T. L. Lin
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
C. W. Nieh
Affiliation:
Keck Laboratory of Engineering, California Institute of Technology, Pasadena, CA 91125 Present address: Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, Ca 90265
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Abstract

Epitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 281
Copyright
Copyright © Materials Research Society 1990

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