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Growth of Cu-Rich/Poor CuInS2 thin films by the sequential modulated flux deposition technique

Published online by Cambridge University Press:  31 January 2011

Alberto Bollero ,
Maarja Grossberg ,
Taavi Raadik ,
Juan Francisco Trigo ,
José Herrero  and
M. Teresa Gutiérrez
Alberto Bollero
Affiliation:
[email protected], CIEMAT, Energy, Av. Complutense 22, Madrid, 28040, Spain, +34-91346 6364, +34-91346 6037
Maarja Grossberg
Affiliation:
[email protected], Tallinn University of Technology (TUT), Materials Science, Tallinn, Estonia
Taavi Raadik
Affiliation:
[email protected], Tallinn University of Technology (TUT), Materials Science, Tallinn, Estonia
Juan Francisco Trigo
Affiliation:
[email protected], CIEMAT, Energy, Madrid, Spain
José Herrero
Affiliation:
[email protected], CIEMAT, Energy, Madrid, Spain
M. Teresa Gutiérrez
Affiliation:
[email protected], CIEMAT, Energy, Madrid, Spain
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Abstract

CuInS2 has emerged during recent years as a good candidate to substitute CuInSe2 as polycrystalline absorber in thin film solar cells, mainly due to its direct band gap energy of 1.5 eV. In this study, absorber layers of both Cu-rich and Cu-poor types have been grown on soda-lime glass substrates by proper selection of the deposition parameters. The morphology and the optical properties of the resulting CuInS2 films were studied in dependence of the deposition order of the elemental constituents: alternate evaporation of the precursors, simultaneous deposition of the three constituents and sequential modulation of the evaporation fluxes.

Keywords

photovoltaicphysical vapor deposition (PVD)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M02-06
Copyright
Copyright © Materials Research Society 2009

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