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Growth -Front Modulation in Lamp Zone Melting of Si on SiO2
Published online by Cambridge University Press: 28 February 2011
Abstract
We present 3 techniques of defect localization we have studied in order to produce Silicon On Insulator films obtained by Lamp Zone Melting. They consist in a periodical variation of the thickness of either the oxide cap, or the polysilicon film, or the underlying oxide layer. We compare the crystallographic quality of the resulting films and in-situ observations of the solidification front for each structure.
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- Copyright © Materials Research Society 1987
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