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Growth and Properties of Microcrystalline Germanium-Carbide Alloys

Published online by Cambridge University Press:  15 February 2011

Jason Herrold  and
Vlkram L. Dalal
Jason Herrold
Affiliation:
Dept. of Electrical and Computer Engr., Iowa State University, Ames, IA 50011.
Vlkram L. Dalal
Affiliation:
Dept. of Electrical and Computer Engr., Iowa State University, Ames, IA 50011.
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Abstract

We report on the preparation and properties of microcrystalline (Ge,C) alloys grown using a remote, reactive H plasma beam deposition technique. The plasma beam was generated using an ECR reactor. The films were grown at low temperatures (300 - 400°C) on glass, stainless steel and c-Si substrates. The optical properties of the films were measured using spectrophotometer and two-beam photoconductivity techniques. The C content was measured using XPS techniques. We find up to 3% C incorporation in the lattice. The degree of crystallinity determined using Raman spectroscopy was very good. X-ray diffraction measurements indicated grain size in the range of a few tens of nm. The best crystallinity was obtained on conducting substrates, indicating the importance of H ion bombardment in promoting crystallinity. We find that the absorption curves for increasing C content remain similar to the curves for c-Ge, but are shifted to higher energies. Thus, the absorption curve is sharper than for c-Si in the same energy range. The defect densities remain low for the range of C content measured. Because of its sharper absorption curve compared with c-Si, the material may be attractive for photovoltaic energy conversion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 561
Copyright
Copyright © Materials Research Society 1999

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References

[1] Soref, R.A., Proc. Inst. Electr. Eng. 81 1687 (1993).Google Scholar
[2] Krishnamurthy, M., Drucker, J., and Challa, A., J. Appl. Phys. 78 7070 (1995).Google Scholar
[3] Kolodzey, J., O'Neil, P. A., Zhang, S., Orner, B. A., Unruh, K.M., Swann, C. P., Waite, M. M., and Shah, S. Ismat, Appl. Phys. Lett. 67 1865 (1995).Google Scholar
[4] Tod, M., Kouvetakis, J., and Smith, D., Appl. Phys Lett. 68 2407 (1996).Google Scholar
[5] Liu, Z., Zhu, J, Xu, N., and Zheng, X, Jpn. J. Appl. Phys. 36 3625 (1997).Google Scholar
[6] John, T., Biäsing, J., Veit, P., and Drüsedau, T., MRS Proceedings 472 (1997).Google Scholar
[7] Dalal, V., Kaushal, S., Maxson, T., girvan, R., and Boerner, A., Proc. of Amer. Ass. of Phys. Inst. of Phys. 394 33 (1997).Google Scholar
[8] Deryagin, B., and Fedosev, D., Growth of Diamond and Graphite From the Vapor Phase, IX. (Nauka, Moscow, USSR 1997) p. 78.Google Scholar