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Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

T. P. Chin ,
J. C. P. Chang ,
K. L. Kavanagh ,
C. W. Tu ,
P. D. Kirchner  and
J. M. Woodall
T. P. Chin
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093–0407
J. C. P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093–0407
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093–0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093–0407
P. D. Kirchner
Affiliation:
IBM T. J. Watson Research Center, Yorktown Height, NY 10598
J. M. Woodall
Affiliation:
IBM T. J. Watson Research Center, Yorktown Height, NY 10598
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Abstract

InxGa1−xP(x>0.27) grown on a GaP substrate has a large direct-bandgap, which is suitable for yellow light emission on a transparent substrate. Because of the large lattice mismatch, usually a thick (10–20 μm) graded buffer layer was required to reduce the threading dislocation density. In this work we report that a thin (1.2 μm for x≃0.35), linearly graded buffer layer can filter out dislocations effectively. The structures were grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) intensity oscillations and X-ray double-crystal diffraction were used to control and determine the composition, respectively. Threading dislocations are well confined in the buffer layer, as shown under transmission electron microscopy. Dislocation loops injected into the substrate were observed, similar to those observed in the Six Ge1−x/Si system. X-ray analysis also shows that the 3% mismatched buffer layer is fully relaxed. This relaxed buffer layer then can serve as a substrate for further growth. Homojunction and heterojunction light emitting diodes were fabricated to demonstrate the material quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 227
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. LeGoues, F. K., Meyerson, B. S., Morar, J. F., and Kirchner, P. D., J. Appl. Phys. 71, 4230 (1992).Google Scholar
2. Fitzgerald, E. A., Xie, Y. H., Green, M. L., Brasen, D., Kortan, A. R., Mii, Y. J., Michel, J., and Weir, B. W., Appl. Phys. Lett. 59, 811 (1991).Google Scholar
3. Stinson, L. J., Yu, J. G., Lester, S. D., Peanasky, M. J., and Park, Kwang, Appl. Phys. Lett. 58, 2012 (1991).Google Scholar
4. Huang, K. H., Yu, J. G., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Stinson, L. J., Craford, M. G., and Liao, A. S. H., Appl. Phys. Lett. 61, 1045 (1992).Google Scholar
5. Masselink, W. T. and Zachau, M., Appl. Phys. Lett., 61, 58 (1992).Google Scholar
6. Chin, T.P., Liang, B.W., Hou, H.Q., Hou, M.C., Chang, C.E., and Tu, C.W., Appl. Phys. Lett. 58, 254 (1991).Google Scholar
7. Chang, K. H., Gibala, R., Srolovitz, D. J., Bhattacharya, P. K., and Mansfield, J. F., J. Appl. Phys. 67, 4093 (1990).Google Scholar
8. Chang, J.C.P., Chen, J.H., Fernandez, J.M., Wieder, H.H., and Kavanagh, K.L., Appl. Phys. Lett. 60, 1129 (1992).Google Scholar
9. Varshni, Y. P., Physica 34, 149 (1967).Google Scholar
10. Nelson, R. J. and Holonyak, N. Jr, Phys, J.. Chem. Solids 37, 629 (1976).Google Scholar