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Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates
Published online by Cambridge University Press: 28 February 2011
Abstract
A systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.
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- Copyright © Materials Research Society 1989
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