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Growth and Characterization of Ferroelectric Pb(Zr,Ti)OM3 Thin Films by Mocvd Using A 6 Inch Single Wafer Cvd System

Published online by Cambridge University Press:  21 February 2011

Masaru Shimizu ,
Masashi Fujimoto ,
Takuma Katayama ,
Tadashi Shiosaki ,
Kenichi Nakaya ,
Mitsuru Fukagawa  and
Eiki Tanikawa
Masaru Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Masashi Fujimoto
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Takuma Katayama
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Tadashi Shiosaki
Affiliation:
Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Kenichi Nakaya
Affiliation:
Amaya Co.Ltd., 3149–1 Kamite Nishikata, Koshigaya City, Saitama Prefecture 343, Japan
Mitsuru Fukagawa
Affiliation:
Amaya Co.Ltd., 3149–1 Kamite Nishikata, Koshigaya City, Saitama Prefecture 343, Japan
Eiki Tanikawa
Affiliation:
CAT K.K., 2–14–7, Suido, Bunkyo–ku, Tokyo 112, Japan
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Abstract

Ferroelectric Pb(Zr,Ti)O3(PZT) films with a perovskite phase were successfully grown by MOCVD using a 6 inch wafer CVD system. A two step growth process was proposed to obtain perovskite PZT films at high gas supplying ratios of [Zr]/([Zr]+[Ti]). The electrical properties of the PZT films obtained were measured. Large area growths of PZT films were carried out and the uniform films could be grown on the entire area of a 6 inch Si wafer. It was also found that the step coverage characteristic of the films grown by MOCVD was good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

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References

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