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Ge Transport and Epitaxy on [111] Si in the Ge/Pd2Si/Si System
Published online by Cambridge University Press: 28 February 2011
Abstract
Solid phase epitaxy in the amorphous(a)-Ge/Pd2Si/Si system has been investigated in the temperature range of 600 to 750 °C. The top Ge started to migrate into the suicide layer at 600 °C. After longer time annealing the mixed Ge released from the suicide matrix and formed a laterally uniform epitaxial Ge70Si30 layer on the [111] Si substrate. A minimum yield of 0.1 was achieved for a 800 Å-thick Ge70Ge30 layer.
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