Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:29:29.434Z Has data issue: false hasContentIssue false
  • English
  • Français

GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices

Published online by Cambridge University Press:  21 March 2011

Vincent Gambin ,
Wonill Ha ,
Mark Wistey ,
Seongsin Kim  and
James S. Harris
Vincent Gambin
Affiliation:
Solid State and Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Wonill Ha
Affiliation:
Solid State and Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Mark Wistey
Affiliation:
Solid State and Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Seongsin Kim
Affiliation:
Agilent Technologies Palo Alto, CA 94303
James S. Harris
Affiliation:
Solid State and Photonics Lab, Stanford University, Stanford, CA 94305, U.S.A.
Get access

Abstract

Dilute nitrogen GaInNAs is a new promising material as an active region for use in 1.3 and 1.55 μm opto-electronic devices. It has been commonly observed that increasing the nitrogen content generally reduces the optical emission intensity and increases laser threshold. However, some non-radiative recombination defects are removed from the material during a post-growth anneal. One drawback to the anneal is that nitrogen out-diffuses from the quantum wells and blue-shifts optical emission. Using a modified active region structure, we have decreased nitrogen out-diffusion and reduced the luminescence blue-shift while still improving crystal quality. The growth consists of high nitrogen GaNAs barriers grown between lower nitrogen GaInNAs quantum wells. As an added benefit, the nitride barriers strain compensate for the compression in the high In content GaInNAs wells. Furthermore, in order to improve luminescence at long wavelengths, we have added Sb to GaInNAs and have observed high intensity photoluminescence (PL) out to 1.6 μm. We have grown and fabricated in-plane GaInNAs lasers that emit at 1.3 μm with a current threshold density of 1.2 kA/cm2 and GaInNAsSb lasers with emissions at 1.46 μm with a current threshold of 2.8 kA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H7.1.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Phillips, A. F., Sweeney, S. J., Adams, A.R., and Thijs, P. J. A., IEEE J. Select. Topics Quantum Electron, 5, 301, (1999).Google Scholar
2. Coldren, C.W., Larson, M.C., Spruytte, S.G., and Harris, J.S., Electron. Lett., (to be published).Google Scholar
3. Nakahara, K., Kondow, M., Kitatani, T., Larson, M.C., Uomi, K., IEEE Photonics Technol. Lett., 10, 487 (1998).Google Scholar
4. Coldren, C.W., Spruytte, S.G., Marshall, A.F., Harris, J.S., Larson, M.C., J. Vac. Sci. Technol., (to be published).Google Scholar
5. Spruytte, S.G., et al., in: Feenstra, R., Myers, T., Shur, M.S., Amano, H. (Eds.), Materials Research Society Symposium Proceedings, 95 (2000) W8.4.1.Google Scholar
6. Krispin, P., Spruytte, S.G., Harris, J. S., Ploog, K. H., J. Applied Physics, 90 (5), 2405 (2001).Google Scholar
7. Krispin, P., Spruytte, S.G., Harris, J. S., Ploog, K. H., Physica B, (to be published).Google Scholar