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GaAs Solar Cell Using an Alternate Arsenic Source
Published online by Cambridge University Press: 28 February 2011
Abstract
Using an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.
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- Copyright © Materials Research Society 1989
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