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Formation and Characterisation of Periodically Structured B2-Aluminides Thin Films by Laser Interference Irradiation
Published online by Cambridge University Press: 11 February 2011
Abstract
B2-aluminide thin films can be used as protective layers to prevent mechanical, thermal and chemical impact on the main components and as intermediate thermal or diffusion barrier layers for semiconductor contacts. Laser irradiation can induce phase transformation due to thermal interaction with sample surface. Moreover, with laser interference, the laser power can be distributed periodically on interference points or lines. The scale of the pattern, sub-micrometer to dozens of micrometer, can be varied easily to the typical scale of grain sizes. In this work, B2-structured NiAl and RuAl thin films with periodic pattern are prepared from corresponding elemental bi-films by laser interference irradiation. The micro-nano-structured surface constitutes of a line-like pattern with a period of about 5 micrometer. There occur melting and re-solidification processes during laser interaction with sample surface. The line-like patterns possess fine grains with a size of about 20 nm in Ni/Al and 5 nm in Ru/Al bi-films. The appearance of B2-structured NiAl and RuAl phases are confirmed by TEM. It is proposed that the phase transformation from initial metastable solid solution to the B2 phases can be induced by laser irradiation.
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- Copyright © Materials Research Society 2003
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