Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:59:00.687Z Has data issue: false hasContentIssue false
  • English
  • Français

Field Effect of Fullerene Thin Film Studied by Displacement Current Measurements and Infrared Absorption Spectroscopy in The Multiple Reflection Geometry

Published online by Cambridge University Press:  15 February 2011

S. Ogawa ,
Y. Kimura ,
H. Ishii  and
M. Niwano
S. Ogawa
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN
Y. Kimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN
H. Ishii
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN
M. Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JAPAN
Get access

Abstract

Au/fullerene(C60)/SiO2/Si field effect transistor (FET) has been investigated to examine the behavior of carrier injection by using displacement current measurement (DCM) and infrared absorption spectroscopy in the multiple internal reflection (MIR-IRAS). At the first scan of DCM, an increasing displacement current due to electron injection was clearly observed above a threshold voltage in forward scan, while no flow-back of the injected electrons was observed, indicating that almost all electrons injected in the scan were trapped. The capacitance obtained from the increasing current suggests that the electrons injected from a Au electrode spread laterally along C60/SiO2 to some extent. At the further scans of DCM, the threshold voltage was shifted to higher voltage, and the lateral spread of the electron was quite suppressed due to the space charge of the filled traps. These results clearly demonstrate that DCM is a useful method to examine the behavior of carriers in field effect transistor (FET) devices. The spectral change in MIR-IRAS observed under bias voltage for electron injection is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L7.13
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ebisawa, F., Kurokawa, T., Nara, S., J.Appl.Phys, 54, 3255(1983)Google Scholar
2. Kudo, K., Yamashita, M., Moriizumi, T., Jpn.J.Appl.Phys, 23, 130(1984)Google Scholar
3. sumura, A.T., Koezuka, H., Ando, T., Appl.Phys.Lett, 49, 1210(1986)Google Scholar
4. Haddon, R.C., perel, A.S., Morris, R.C., Palstra, T.T.M. and Hebard, A.F., Appl.Phys.Lett. 67(1), 121(1995)Google Scholar
5. Kaz, H.E., Bao, Z., Gilat, S.L., Acc.Chem.Res, 34, 359(2001)Google Scholar
6. Dimitrakopoulos, C.D., Mascaro, D.J., IBM J.RES&DEV, 45, 11(2001)Google Scholar
7. Dimitrakopoulos, C.D., Malenfant, P.R.L., Adv.Mat, 14(2), 99(2002)Google Scholar
8. gusa, S.E., Gemma, N., Miura, A. Mizushima, K. and Azuma, M., J.Appl.Phys. 71(4), 2042(1992)Google Scholar
9. Egusa, S., Miura, A., Gemma, N., Miura, A., and Azuma, M., Jpn.J.Appl.Phys. 33, 2741(1994)Google Scholar
10. Chabel, Y.J., Surf.Sci.Technol, A10, 3171(1992)Google Scholar
11. Furukawa, Y., Furukawa, S., Maekawa, S., and Ishima, M., Macromol. Symp. 184, 99(2002)Google Scholar
12. Rao, A. M., Zhou, P., Wang, K. A., Hager, G. T., Holden, J. M., Wang, Y., Lee, W. T. Bi, X. X., Eklund, P. C., Cornett, D. S., Duncan, M. A., Amster, I. J., Science, 259, 955(1993).Google Scholar
13. kvarnstrom, C., Neugebauer, H., Kuzmany, H., Sitter, H. and Sariciftci, N.S., J.Electroanal.Chem, 511, 13(2001)Google Scholar
14. , Pichler, Winkler, R., and Kuzmany, H., Phys.Rev.B, 49(15), 879(1994)Google Scholar