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Ferroelectric and Ferromagnetic Properties of Co-doped BiFeO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Danilo G Barrionuevo ,
Surinder P Singh ,
Ram S Katiyar  and
Maharaj S. Tomar
Danilo G Barrionuevo
Affiliation:
[email protected]@upr.edu, University of Puerto Rico Mayagüez, Physics, PO Box 9000, Mayagüez, Mayagüez, P.R. 00681-9000, Puerto Rico, (787) 832-4040
Surinder P Singh
Affiliation:
[email protected], University of Puerto Rico Mayaguez, Engineering science and Materials, Mayaguez, Mayaguez, 00681, Puerto Rico
Ram S Katiyar
Affiliation:
[email protected], University of Puerto Rico, Department of Physics, Mayaguez, Puerto Rico
Maharaj S. Tomar
Affiliation:
[email protected], University of Puerto Rico Rio Piedras, San Juan, Puerto Rico
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Abstract

Materials which possess electrical and magnetic coupling are of great interest for novel devices. Bi(Fe1-xCox)O3 (BFCO) material system was synthesized by solution route for various compositions and thin films were prepared by spin coating on Pt (Pt/Ti/SiO2/Si) substrates. Structural properties of the films were investigated by x-ray diffraction and Raman spectroscopy. X-ray diffraction patterns confirms intense (110) in BiFeO3 and Bi(Fe1-xCox)O3 with rhombohedra distorted perovskite structure without impure phase. Bi(Fe1-xCox)O3 films show week ferroelectric polarization and ferromagnetism at room temperature. Ferroelectric and ferromagnetic coupling could be attributed to the elimination of oxygen vacancies and increased stress in the crystal structure by partial replacement of Fe2+ ion by Co2+ ion.

Keywords

x-ray diffraction (XRD)storagestress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1256: Symposium N – Functional Oxide Nanostructures and Heterostructures , 2010 , 1256-N06-47
Copyright
Copyright © Materials Research Society 2010

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References

[1] Wang, J et al, Science 299 1719 (2003)Google Scholar
[2] Hur, N, Park, S, Sharma P, A, Ahn J, S, Guha, S and Cheong S, W, Nature 429 392 (2004)Google Scholar
[3] Dong S, X, Zhai J, Y, Li J, F, Viehland, D and Bichurin M, I, Appl. Phys. Lett. 89 243512 (2006)Google Scholar
[4] Smolenskii G, A and Chupis, I, Sov. Phys. Usp. 25, 475 (1982)Google Scholar
[5] Hill N A, J. Phys. Chem. B 104 6694 (2000)Google Scholar
[6] Singh S, K and Ishiwara, H, Japan. J. Appl. Phys. 44 L734 (2005)Google Scholar
[7] Kubel, F and Schmid, H, Acta Crystallogr. B: Struct. Sci. B 46 698 (1990)Google Scholar
[8] Palkar V, R, John, J and Pinto, R., Appl. Phys. Lett. 80 1628 (2002)Google Scholar
[9] Wang Y, P, Zhou, L, Zhang M, F, Chen X, Y, Liu J, M and Liu Z, G Appl. Phys. Lett. 84 1731 (2004)Google Scholar
[10] Souchkov A, B et al, Phys. Rev. Lett. 91 27203 (2003)Google Scholar
[11] Singh M, K, HM, Jang, Ryu, S, Jo M, H, Appl. Phys. Lett. 88 42907 (2006)Google Scholar
[12] Fukumura, H. et al., J. Magn. Magn. Mater. 310 e367 (2007)Google Scholar
[13] Zheng, H. et al, Science 303, 661 (2004)Google Scholar
[14] Wang, Y, Jiang Q, H, He, H Cand Nan C, W, Appl. Phys. Lett. 88 142503 (2006)Google Scholar
[15] Zhongqiang, H, et al, J. Phys. D: Appl. Phys. 42 185010 (2009)Google Scholar
[16] Neaton J, B, Ederer, C and Waghmare U, V, Phys. Rev. B 71, 014113 (2005)Google Scholar