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Femtosecond Probe-Probe Transmission Studies of Lt-Grown Gaas Near the Band Edge

Published online by Cambridge University Press:  22 February 2011

H. B. Radousky ,
A. F. Bello ,
D. J. Erskine ,
L. N. Dinh ,
M. J. Bennahmias ,
M. D. Perry ,
T. R. Ditmire  and
R. P. Mariella Jr.
H. B. Radousky
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
A. F. Bello
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
D. J. Erskine
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
L. N. Dinh
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
M. J. Bennahmias
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
M. D. Perry
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
T. R. Ditmire
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
R. P. Mariella Jr.
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
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Abstract

We have studied the near-edge optical response of a LT-grown GaAs sample which was deposited at 300 °C on a Si substrate, and then annealed at 600 °C. The Si was etched away to leave a 3-micron free standing GaAs film. Femtosecond transmission measurements were made using an equal pulse technique at four wavelengths between 825 and 870 nm. For each wavelength we observe both a multipicosecond relaxation time, as well as a shorter relaxation time which is less than 100 femtoseconds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 389
Copyright
Copyright © Materials Research Society 1994

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