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Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2films

Published online by Cambridge University Press:  17 March 2011

WK Choi ,
V Ng ,
YW Ho ,
TB Chen  and
V Ho
WK Choi
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
V Ng
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
YW Ho
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
TB Chen
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
V Ho
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Abstract

The high resolution transmission electron microscopy and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal processing (RTA) have been presented. From the results of samples with different Ge concentrations, it was concluded that there is a narrow window in the Ge concentration that can produce nanocrystals. We also showed that it is possible to vary RTA duration or temperature to produce Ge nanocrystals with varying sizes. Our results therefore suggest that it is possible to utilize (i) annealing duration and; (ii) temperature to tune crystal sizes for optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.1.1
Copyright
Copyright © Materials Research Society 2001

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References

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