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Fabrication of silicon nanowires by ion beam irradiation

Published online by Cambridge University Press:  21 March 2013

J. Song ,
Z. Y. Dang ,
S. Azimi  and
M. B. H. Breese
J. Song*
Affiliation:
Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542
Z. Y. Dang
Affiliation:
Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542
S. Azimi
Affiliation:
Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542
M. B. H. Breese*
Affiliation:
Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 Singapore Synchrotron Light Source (SSLS), 5 Research Link, National University of Singapore, 5 Research Link, Singapore 117603
*
*Corresponding author: Song Jiao: [email protected]
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Abstract

Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area.

Keywords

ion-beam processingnanostructureSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1512: Symposium FF – Semiconductor Nanowires—Optical and Electronic Characterization and Applications , 2013 , mrsf12-1512-ff09-21
Copyright
Copyright © Materials Research Society 2013

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