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Fabrication of PLZT Film-on-Foil Dielectric Sheets for Embedded Passives1

Published online by Cambridge University Press:  15 March 2011

Beihai Ma
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, U.S.A.
Manoj Narayanan
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, U.S.A.
U. Balachandran
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, U.S.A.
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Abstract

Ferroelectric film-on-foil capacitors hold special promise to replace discrete passive components in the development of electronic devices that require greater performance and smaller size. We have deposited Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on base metal foils to form film-on-foil capacitor sheets that can be embedded into printed circuit boards. The rootmean-square surface roughness was determined to be ≍3 nm for 1.15-μm-thick PLZT films on LaNiO3-buffered Ni foils. The following dielectric properties were measured: relative permittivity of ≍1300 and dielectric loss (tan δ) of ≍0.05, leakage current density of 6.6 × 10−9 A/cm2 at 25°C and 1.4 × 10−8 A/cm2 at 150°C, and mean breakdown strength >2.5 MV/cm. A remnant polarization (Pr) of ≍33 μC/cm2 and coercive field strength (Ec) of ≍50 kV/cm were observed with a maximum voltage of 300 V applied during the P-E loop measurement. The energy storage capability of the dielectric film is ≍45 J/cm3.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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Footnotes

1

The submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357. The U.S. Government retains for itself, and others acting on its behalf, a paidup nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the Government.

References

REFERENCES

1. Zhu, Y., Zhu, J., Song, Y. J., and Desu, S. B., Appl. Phys. Lett. 73, 19581960 (1998).Google Scholar
2. Ihlefeld, J., Laughlin, B., Hunt-Lowery, A., Borland, W., Kingon, A., and Maria, J. P., J. Electroceramics 14, 95102 (2005).Google Scholar
3. Kingon, A. I. and Srinivasan, S., Nature Materials 4, 233237 (2005).Google Scholar
4. Zou, Q., Ruda, H. E., and Yacobi, B. G., Appl. Phys. Lett. 78, 12821284 (2001).Google Scholar
5. Ma, B., Kwon, D. K., Narayanan, M., and Balachandran, U., Mater. Lett. 62, 35733575 (2008).Google Scholar
6. Kim, D. J., Materials Science and Engineering B 141, 8790 (2007).Google Scholar
7. Cheng, J., He, L., Che, L., and Meng, Z., Thin Solid Films 515, 23982402 (2006).Google Scholar
8. Maria, J.P., Cheek, K., Streiffer, S., Kim, S.-H., Dunn, G., and Kingon, A., J. Am. Ceram. Soc. 84, 2436–38 (2001).Google Scholar
9. Jonscher, K., Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London (1983).Google Scholar
10. Weibull, W., J. Appl. Mech. 18, 293–7 (1951).Google Scholar
11. Dissado, L. A., J. Phys. D: Appl. Phys. 23, 1582–91 (1990).Google Scholar
12. Tuncer, E., James, D. R., Sauers, I., Ellis, A. R., and Pace, M. O., J. Phys. D: Appl. Phys. 39, 42574268 (2006).Google Scholar