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Evidence for Complexes of Hydrogen with Impurities or Defects in Bulk III-V Materials

Published online by Cambridge University Press:  26 February 2011

B. Clerjaud ,
D. Côte ,
M. Krause  and
C. Naud
B. Clerjaud
Affiliation:
Laboratoire d'Optique de la Mati'ere Condensée, Université P. et M. Curie 4, place Jussieu -75252 Paris Cedex 05, France
D. Côte
Affiliation:
Laboratoire d'Optique de la Mati'ere Condensée, Université P. et M. Curie 4, place Jussieu -75252 Paris Cedex 05, France
M. Krause
Affiliation:
Laboratoire d'Optique de la Mati'ere Condensée, Université P. et M. Curie 4, place Jussieu -75252 Paris Cedex 05, France
C. Naud
Affiliation:
Laboratoire d'Optique de la Mati'ere Condensée, Université P. et M. Curie 4, place Jussieu -75252 Paris Cedex 05, France
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Abstract

Series of sharp optical absorption lines around 2200 cm-1 in GaP, 2000 cm-1 in GaAs, and 2300 cm-1 in InP are observed in bulk materials. They are shown to be due to stretching local modes of vibration of P-H or As-H bonds, the hydrogen sitting nearby an impurity or defect. The origin of the hydrogen contamination of the bulk materials is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 341
Copyright
Copyright © Materials Research Society 1988

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References

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