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Evaluation of Microstructure Evolution of Al-1%SI-0.5%CU Thin Film Induced By Post Deposition Processing

Published online by Cambridge University Press:  15 February 2011

C. Zaccherini ,
M. Bacchetta ,
G. Pavia ,
L. Riva  and
C. Savoia
C. Zaccherini
Affiliation:
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza, Ita
M. Bacchetta
Affiliation:
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza, Ita
G. Pavia
Affiliation:
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza, Ita
L. Riva
Affiliation:
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza, Ita
C. Savoia
Affiliation:
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza, Ita
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Abstract

The evolution of grain structure of AI-1%Si-0.5%Cu film, deposited by sputtering at 150'C substrate temperature has been evaluated, comparing as deposited film microstructure and grain structure at the end of process, both on large metal areas and on narrow strips. Microstructure has been characterized by means of FIB, TEM and XRD analyses. Grain size evolution resulted to be strongly dependent from the type of substrate. In particular TiN substrate appeared to greatly inhibit AlSiCu grain growth. This behavior was attributed to the formation of Ti9AI23 intermetallic compound during the alloy thermal treatment, that pins grain boundaries thus limiting Al grain boundary mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 273
Copyright
Copyright © Materials Research Society 1996

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