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Evaluation of Inhibitors for ECMP of Copper Using Electrochemical Quartz Crystal Microbalance (EQCM) Technique

Published online by Cambridge University Press:  01 February 2011

Ashok Muthukumaran ,
Viral Lowalekar  and
Srini Raghavan
Ashok Muthukumaran
Affiliation:
[email protected], The University of Arizona, Materials Science and Engineering, 4715 E FT LOWELL RD,, TUCSON,AZ-85712, TUCSON, ARIZONA, 85712, United States, 520-237-1404
Viral Lowalekar
Affiliation:
[email protected], The University of Arizona, Materials Science and Engineering, 4715 E Ft Lowell Rd, Tucson, Arizona, 85712, United States
Srini Raghavan
Affiliation:
[email protected], The University of Arizona, Materials Science and Engineering, 4715 E Ft Lowell Rd, Tucson, Arizona, 85712, United States
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Abstract

Chemical formulations for the electrochemical mechanical planarization (ECMP) of copper must contain constituents that are stable at anodic potentials. A key component of the formulation is a corrosion inhibitor, which is required to protect low lying areas while higher areas are selectively removed. Organic compounds, which adsorb on copper at low overpotentials and form a film by oxidation at higher overpotentials, may be particularly useful for ECMP. The objective of this work is to evaluate the effect of two inhibitors on copper dissolution in oxalic acid based systems using an electrochemical quartz crystal microbalance (EQCM) technique. By recording current as well as mass changes during the application of potential to electrodeposited copper films, the extent and mechanism of inhibition of sulfhydryl based acid (SBA) inhibitor has been explored.

Keywords

CMPCupassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F12-09
Copyright
Copyright © Materials Research Society 2006

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References

[1] Chen, L., “Breakthrough Technology for CMP”, Semiconductor fabtech, 24th edition, pp.37–141 (2004).Google Scholar
[2] Kondo, S., et al., IEEE International Interconnect Technology Conference, June (2005).Google Scholar
[3] Economikos, L. et al., Proceedings of IITC, pp.233–235, June 2004.Google Scholar
[4] Liu, F. Q., Chen, L., Duboust, A., Sbai, S., Manens, A., Wang, Y., Hsu, W. Y., Mater. Res. Soc. Symp. Proc, 869, 87–96 (2005).Google Scholar
[5] Suni, I. I. and Du, B., IEEE Trans. Semicond. Manuf. 18 (3), 341 - 49 (2005).Google Scholar
[6] Gorantla, V. R. K. et al., Electrochemical and Solid State Letters, 8(5), G131–G134 (2005).Google Scholar
[7] Aksu, S., J. Electrochem. Soc., 152 (12), G938–G943 (2005).Google Scholar
[8] Tamilmani, S., “Dissolution, Corrosion and Environmental Issues in Chemical Mechanical Planarization of Copper,” Ph.D Dissertation, University of Arizona (2005).Google Scholar