Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-09T07:20:53.437Z Has data issue: false hasContentIssue false

Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films.

Published online by Cambridge University Press:  11 February 2011

A. Ramírez-Porras
Affiliation:
Centro de Investigación en Ciencia e Ingeniería de Materiales and Escuela de Física, Universidad de Costa Rica, San Pedro 2060, Costa Rica.
L.F. Fonseca
Affiliation:
Department of Physics, University of Puerto Rico, Río Piedras, PR 00931, U.S.A.
O. Resto
Affiliation:
Department of Physics, University of Puerto Rico, Río Piedras, PR 00931, U.S.A.
Get access

Abstract

A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. With this method, the PL spectra from a diverse set of samples can be resolved mainly as the sum of two components: a contribution from a gaussian-like distribution of sizes of quantum dots (QD) and a similar component from a distribution of quantum wires (QW). These distributions of sizes and their associated PL energies agree well with the so-called Smart Quantum Confinement model (SQC).

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Canham, L.T., Appl. Phys. Lett. 57 (1990) 1046.Google Scholar
Tsybeskov, L., MRS Bulletin 23 (1998) 33.Google Scholar
3. Bisi, O., Ossicini, S. and Pavesi, L., Surface Review Reports 38 (2000) 1.Google Scholar
4. Bettotti, P., Cazzanelli, M., Dal Negro, L., Danese, B., Gaburro, Z., Oton, C.J., Vijaya Prakash, G. and Pavesi, L., J. Phys.: Condens. Matter 14 (2002) 8253.Google Scholar
5. Delerue, C., Allan, G., and Lannoo, M., Journal of Luminescence 80 (1999) 65.Google Scholar
6. Sui, Z., Leong, P.P., Herman, I.P., Higashi, G.S., and Temkin, H., Appl. Phys. Lett. 60 (1992) 2086.Google Scholar
7. Münder, H., Andrzejak, C., Berger, M.G., Klemradt, U., Lüth, H., Herino, R., and Ligeon, M., Thin Solid Films 221 (1992) 27.Google Scholar
8. Soni, R.K., Fonseca, L.F., Resto, O., Weisz, S.Z., and Tripathy, S., Mat. Res. Soc. Symp. Proc. 571 (2000) 235.Google Scholar
9. Soni, R.K., Fonseca, L.F., Resto, O., Buzaianu, M. and Weisz, S.Z., Journal of Luminescence 83–84 (1999) 187.Google Scholar
10. Nayfeh, M.H., Yamani, Z., Gurdal, O., and Alaql, A., Mat. Res. Soc. Symp. Proc. 536 (1999) 191.Google Scholar
11. Lehmann, V., Jobst, B., Muschik, R., Kux, A., and Petrova-Koch, V., Jpn. J. Appl. Phys. 32 (1993) 2095.Google Scholar
12. Naudon, , Goudeau, P., and Vezin, V., in: Vial, J.C. and Derrien, J. (Eds.), Porous Silicon Science and Technology (Les Editions de Physique, Paris, 1995).Google Scholar
13. John, G.C. and Singh, V.A., Phys. Rev. B 50 (1994) 5329.Google Scholar
14. Elhouichet, H., Bessaís, B., Ben Younes, O., Ezzaouia, H., and Oueslati, M., Thin Solid Films 304 (1997) 358.Google Scholar
15. Mavi, H.S., Rasheed, B.G., Soni, R.K., Abbi, S.C., and Jain, K.P., Thin Solid Films 397 (2001) 125.Google Scholar
16. Yorikawa, H., and Muramatsu, S., Journal of Luminescence 87 (2000) 423.Google Scholar
17. Miyazaki, S., Mouraguchi, A., and Shiba, K., Thin Solid Films 297 (1997) 183.Google Scholar
18. Wolkin, M.V., Jorne, J., Fauchet, P.M., Allan, G., and Delerue, C., Phys. Rev. Lett. 82 (1999) 197; Mat. Res. Soc. Symp. Proc. 536 (1999) 185.Google Scholar
19. Ramírez-Porras, A. and Weisz, S.Z., Surf. Sci. 515 (2002) 18 Google Scholar
20. Delerue, C., Allan, G., and Lannoo, M., Phys. Rev. B 48 (1993) 11024.Google Scholar
21. Kanemitsu, Y., Mimura, H., Matsumoto, T., and Nakamura, T., Journal of Luminescence 72–74 (1997) 344.Google Scholar
22. Delerue, C., Allan, G., and Lannoo, M., Journal of Luminescence 80 (1999) 65.Google Scholar