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Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

Art J. Nelson ,
M. Bode ,
G. Horner ,
K. Sinha  and
John Moreland
Art J. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
M. Bode
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
G. Horner
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
K. Sinha
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
John Moreland
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303
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Abstract

Epitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 599
Copyright
Copyright © Materials Research Society 1994

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