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Epitaxial Co/NiAl Thin Film Growth on Si Substrates

Published online by Cambridge University Press:  10 February 2011

Heng Gong ,
Wei Yang ,
David N. Lambeth  and
David E. Laughlin
Heng Gong
Affiliation:
Department of Electrical and Computer Engineering, [email protected]
Wei Yang
Affiliation:
Department of Electrical and Computer Engineering, [email protected]
David N. Lambeth
Affiliation:
Department of Electrical and Computer Engineering, [email protected]
David E. Laughlin
Affiliation:
Department of Materials Science and Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213–3890
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Abstract

Quad-crystal Co/NiAI/Ag thin films were epitaxially grown on hydrofluoric acid etched Si(111) single crystal substrates by sputter deposition. The orientation relationship was studied by x-ray θ;/2θ; diffraction and pole figure Φ-scan, and it was determined to be Co(image1) 11 NiAI(1 10) 11 Ag(111) 11 Si(1 11). The Ag layer contains two twin-related orientations of grains. NiAI grows with three variants of grains on the Ag(1 11) layer. Since Co(image1) contains grains with four possible easy axis directions when grown on each NiAl variant, the quad-crystal media consist of grains with twelve easy axis directions and exhibit nearly isotropic in-plane magnetic properties. Meanwhile, uni-crystal Co(image2)/NiAl(1 12) films were also epitaxially grown on Ag(110)/HF-Si(110) templates. The orientation relationships determined from these epitaxial films were very useful in understanding the texture evolution of the Co alloys on NiAl. It indicates that the Co (image2) texture evolution on the (110) texture of NiAl on amorphous substrates, such as NiP/A1Mg or glass, is due to a difficult to observe NiA1 (112) texture on the top of the (110) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999 , 333
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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