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Enhanced Phonon-Energy Coupling: Dramatic Reduction of Leakage Current of Silicon Oxide

Published online by Cambridge University Press:  01 February 2011

Zhi Chen ,
Jun Guo  and
Chandan B Samantaray
Zhi Chen
Affiliation:
[email protected], University of Kentucky, Electrical & Computer Engineering, 453 Anderson Tower, Lexington, KY, 40506, United States, (859)257-2300 ext 268, (859)257-3092
Jun Guo
Affiliation:
[email protected], University of Kentucky, Dept. of Electrical & Computer Engineering, Lexington, KY, 40506, United States
Chandan B Samantaray
Affiliation:
Chandan B Samantaray , University of Kentucky, Dept. of Electrical & Computer Engineering, Lexington, KY, 40506, United States
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Abstract

We study in detail a newly discovered effect, phonon-energy-coupling enhancement (PECE) effect, produced by rapid thermal processing (RTP). It includes two aspects: (1) Strengthening Si-D bonds and Si-O bonds and (2) Change of energy band structure and effective mass due to thermal shock. It is shown that not only Si-D bonds but also Si-O bonds have been strengthened dramatically, leading to enhancement of robustness of the oxide structure and the oxide/Si interface. For thick oxides (>3 nm), the gate leakage current has been reduced by two orders of magnitude and the breakdown voltage has been improved by ~30% due to phonon-energy coupling. For ultrathin oxides (2.2 nm), the direct tunneling current has been reduced by five-orders of magnitude, equivalent to that of HfO2, probably due to the increased effective mass and barrier height.

Keywords

oxidedevicesinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-25
Copyright
Copyright © Materials Research Society 2006

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