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Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

Published online by Cambridge University Press:  15 February 2011

V. C. Venezia ,
T. E. Haynes ,
A. Agarwal ,
H. -J. Gossmann  and
D. J. Eaglesham
V. C. Venezia
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA Department of Physics, University of North Texas, Denton, Texas 76201, USA
T. E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
A. Agarwal
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA Bell Laboratory, Lucent Technologies, Murray Hill, New Jersey 07974, USA
H. -J. Gossmann
Affiliation:
Bell Laboratory, Lucent Technologies, Murray Hill, New Jersey 07974, USA
D. J. Eaglesham
Affiliation:
Bell Laboratory, Lucent Technologies, Murray Hill, New Jersey 07974, USA
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Abstract

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 303
Copyright
Copyright © Materials Research Society 1997

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References

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