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The Emergence Of Plasma Enhanced Chemical Vapor Deposition (PECVD) As A Viable Industrial Coating Process

Published online by Cambridge University Press:  21 February 2011

George Engle  and
James W. Warren
George Engle
Affiliation:
GEC INC., 2650 S. 46th Street, Suite 103, Phoenix, AZ 85034
James W. Warren
Affiliation:
Composite Innovations Corporation, 24300 Aetna Street, Woodland Hills, CA 91367.
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Abstract

The potential of Chemical Vapor Deposition, as a process for applying erosion and corrosion resistant ceramic and metal coatings to ferrous and non-ferrous alloys has long been recognized. Unfortunately, the high deposition temperatures (900°-1000°C) cause deleterious and generally nonreversible metallurgical changes in the coated parts. Corresponding shape stability and dimensional tolerances are also lost. For more than twelve years, Plasma Enhanced Chemical Vapor Deposition (PECVD) technology has evolved from the laboratory into production operations within the semiconductor industry.

This acceptance is primarily due to the low PECVD deposition temperatures (<450 ° C). The PECVD processes have recently demonstrated an adaptability to coating alloy components and carbon/ceramic fibers with a wide range of carbide, boride, nitride, oxide and metal coatings to render them corrosion and erosion resistant. Typical Knoop hardness control of sili on carbide coatings can be controlled from about 2300 to more than 7000 kgfmn−2 at 10% penetration of the indenter while coating thickness and uniformity can be controlled from 300A ± 5%. Selected coating applications and performance are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 281
Copyright
Copyright © Materials Research Society 1990

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References

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