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Electronic Structure of GaAs/GaInP Strained Layer Quantum Wells

Published online by Cambridge University Press:  25 February 2011

K. Rerbal ,
K. Zitouni  and
A. Kadri
K. Rerbal
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
K. Zitouni
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
A. Kadri
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
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Abstract

This work reports on the calculations of the electronic structure of GaAs/GaxIn1−x P strained layer quantum wells. The calculations are based on the multiband envelope function approach, considering the valence band offset value that has been recently proposed. The effect of strain due to the lattice-mismatch is studied. The calculated results are compared with the data obtained from photoreflectance measurements. Satisfactory agreement is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 209
Copyright
Copyright © Materials Research Society 1993

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References

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