Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-20T09:37:53.292Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron-Beam-Induced-Current (EBIC) Imaging of Defects in Si1−xGeX Multilayer Structures

Published online by Cambridge University Press:  25 February 2011

J.C. Sturm ,
X. Xiao ,
P.M. Garone  and
P.V. Schwartz
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
X. Xiao
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
P.M. Garone
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
P.V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
Get access

Abstract

The electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 341
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J.Vac.Sci. Technol A2, 434 (1984).Google Scholar
2. Kasper, E., Herzog, H.J., and Kibbel, H., Appl.Phys 8, 199 (1975).CrossRefGoogle Scholar
3. Kasper, E. and Herzog, H.J., Thin Solid Films 44, 357 (1977).Google Scholar
4. People, R., Phys. Rev. B 32, 1405 (1985).Google Scholar
5. Leamy, H.J., J. Appl. Phys. 53, R51 (1992).Google Scholar
6. Ioannou, D.E. and Davidson, S., Phys.Stat.Sol.(a) 48, K1 (1978)Google Scholar
7. Kohama, Y., Fukuda, Y., Seki, M., Appl.Phys.Lett. 52, 380 (1988).Google Scholar
8. Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., and Stork, J.C., IEEE Electron Dev. Lett. EDL–9, 165 (1988).Google Scholar
9. Gibbons, J.F., Gronet, C.M., Williams, K.E., Appl. Phys. Lett. 47, 721 (1985).Google Scholar